米乐m6网页版登录入口,mile米乐m6

Current Language
×
Chinese (Simplified, PRC)

选择语言:

切换菜单
Current Language
×
Chinese (Simplified, PRC)

选择语言:

gongjigongyi.com

与米乐m6网页版登录入口代表实时聊天。 工作时间:上午 9:00 - 下午 5:00(太平洋标准时间)。

电话

致电我们

工作时间:上午9:00-下午5:00(太平洋标准时间)

下载

下载手册、产品技术资料、软件等:

下载类型
型号或关键字

反馈

Power Sequence for GaN HEMT Characterization


In order to measure the I-V characteristics of gallium nitride (GaN) high electron mobility transistor (HEMT), a special power sequence is required to prevent unexpected damage during IV evalsuation. The tools to capture the I-V curve must equip the function for a specific sequence. Keithley’s Automated Characterization Software (ACS) gives the ability to perform power sequencing for a GaN HEMT characterization of a device without damaging it and to capture its intrinsic I-V characteristics.
米乐m6网页版登录入口